Growth, Processing and Devices
Published December 27th 1989 by CRC Press – 160 pages
This book provides a review of the state-of-the-advancing-art in growth, processing and devices from compound semiconductors. Consisting of the proceedings of an important topical conference held at the University of Florida, speakers from both the U.S. and Japan were present. This fascinating work discusses critical issues in growth and characterization by semi-insulating bulk crystals, with particular emphasis placed on the latest modification of gas sources. It includes the advantages, limitations, and techniques pertaining to chemical vapor deposition. This compilation presents the most recent advances in the new technologies involving compound semiconductors, thus it fills an important need in the fast-moving field of microelectronics. This one-of-a-kind resource provides contrasts and insight into U.S. and Japanese technologies and devices as well as indications of future directions. It provides a very up-to-date and comprehensive treatment of world-class scientific and technological developments in this astounding area of major commercial importance. These proceedings will be a useful, indispensable resource for scientific researchers, process engineers, and technology strategists.
Introduction. Mass-Producing Technologies for Semi-Insulating GaAs Substrates. Photo-Mombe: A New Epitaxial Growth Technique. Photoassociated Single Molecular Layer Growth. Atomic Layer Epitaxy of III-V Compounds. Passivation of III-V Compound Semiconductors. Understanding and Control of Insulator-Semiconductor Interfaces for Surface Passivation of III-V Compound Semiconductors. Surface-Emitting GaInAsP/InP Diode Lasers Fabricated by Mass Transport. Growth, Characterization, and Device Applications of GaAs on Si. Recent Progress in Quantum Well Lasers in Japan. Quantum Well Heterostructure Lasers. Overview of a Vertical Cavity Surface Emitting Laser.